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| STTH1L06 Turbo 2 ultrafast high voltage rectifier Features Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance DO-41 STTH1L06 SMB STTH1L06U Description The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. SMA STTH1L06A Table 1. Device summary Symbol IF(AV) VRRM IR (max) Tj (max) VF (max) trr (max) Value 1A 600 V 75 A 175 C 1.05 V 80 ns October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9 Characteristics STTH1L06 1 Table 2. Symbol VRRM IF(RMS) Characteristics Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage DO-41 Forward rms voltage SMA / SMB DO-41 IF(AV) Average forward current = 0.5 SMA SMB IFSM Tstg Tj Tc = 120 C Tc = 135 C Tc = 145 C 30 20 -65 to + 175 175 A C C 1 A 7 Value 600 10 A Unit V t = 10 ms sinusoidal DO-41 Surge non repetitive forward current p tp = 10 ms sinusoidal SMA / SMB Storage temperature range Maximum operating junction temperature Table 3. Symbol Thermal parameters Parameter L = 10 mm DO-41 SMA SMB Value (max) 45 30 C/W 25 70 Junction to ambient (1) 2 Unit Rth(j-l) Junction to lead Rth(j-a) L = 10 mm DO-41 1. Rth(j-a) is measured with a copper area S = 5 cm (see Figure 14.) Table 4. Symbol IR Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 150 C Forward voltage drop Tj = 25 C Tj = 150 C VR = 600 V Min. Typ. Max. 1 A 10 75 1.3 IF = 1 A V 0.85 1.05 Unit VF To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.165 IF2(RMS) 2/9 Doc ID 8321 Rev 4 STTH1L06 Table 5. Symbol trr tfr VFP Characteristics Dynamic characteristics Parameter Test conditions Tj = 25 C Tj = 25 C Tj = 25 C IF = 1 A, dIF/dt = -50, A/s, VR = 30 V IF = 1 A, dIF/dt = 100 A/s VFR = 3.5 V IF = 1 A, dIF/dt = 100 A/s Min. Typ. 55 Max. 80 50 10 Unit ns ns V Reverse recovery time Forward recovery time Forward recovery voltage Figure 1. P(W) 1.50 Conduction losses versus average current = 0.05 = 0.1 = 0.2 = 0.5 Figure 2. IFM(A) 100.0 Forward voltage drop versus forward current 1.25 =1 Tj=150C (Maximum values) 1.00 10.0 Tj=150C (Typical values) 0.75 Tj=25C (Maximum values) 0.50 T 1.0 0.25 IF(av)(A) 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 =tp/T 1.0 1.1 tp VFM(V) 0.1 1.2 1.3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 3. Relative variation of thermal Figure 4. impedance junction ambient versus pulse duration 1.0 Relative variation of thermal impedance junction ambient versus pulse duration epoxy FR4, S = 1 cm Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 = 0.5 DO-41 Lleads = 10mm Zth(j-a)/Rth(j-a) epoxy FR4, Lead = 10 mm 0.9 0.8 0.7 0.6 0.5 0.4 = 0.5 SMB 0.5 0.4 0.3 0.2 = 0.1 = 0.2 0.3 T = 0.2 = 0.1 0.2 0.1 tp T 0.1 Single pulse tp(s) 1.E+00 1.E+01 0.0 1.E-01 =tp/T 1.E+02 Single pulse tp(s) 1.E+00 1.E+01 1.E+03 0.0 1.E-01 =tp/T 1.E+02 tp 1.E+03 Doc ID 8321 Rev 4 3/9 Characteristics STTH1L06 Figure 5. Relative variation of thermal Figure 6. impedance junction ambient versus pulse duration (epoxy FR4) IRM(A) 2.5 2.3 2.0 VR=400V Tj=125C Peak reverse recovery current versus dIF/dt (90% confidence) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse = 0.2 = 0.1 = 0.5 SMA IF=2 x IF(av) IF=IF(av) 1.8 IF=0.5 x IF(av) 1.5 1.3 1.0 0.8 T IF=0.25 x IF(av) 0.5 0.3 tp tp(s) 1.E+00 1.E+01 0.0 1.E-01 =tp/T 1.E+02 dIF/dt(A/s) 0 5 10 15 20 25 30 35 40 45 50 0.0 1.E+03 Figure 7. trr(ns) 800 700 600 500 400 300 200 100 0 0 5 Reverse recovery time versus dIF/dt Figure 8. (90% confidence) Qrr(nC) 220 VR=400V Tj=125C Reverse recovery charges versus dIF/dt (90% confidence) 200 180 160 VR=400V Tj=125C IF=2 x IF(av) IF=IF(av) IF=2 x IF(av) IF=IF(av) IF=0.5 x IF(av) 140 120 100 80 60 40 IF=0.5 x IF(av) dIF/dt(A/s) 10 15 20 25 30 35 40 45 50 20 0 0 5 10 15 dIF/dt(A/s) 20 25 30 35 40 45 50 Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature 1.25 S factor S factor 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 35 40 45 50 1.00 IRM 0.75 QRR 0.50 0.25 dIF/dt(A/s) IF=IF(av) VR=400V Tj=125C Tj(C) 0.00 25 50 75 IF=IF(av) VR=400V Reference: Tj=125C 100 125 4/9 Doc ID 8321 Rev 4 STTH1L06 Characteristics Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) VFP(V) 25 IF=IF(av) Tj=125C Figure 12. Forward recovery time versus dIF/dt (90% confidence) tfr(ns) 200 180 160 140 IF=IF(av) VFR=1.1 x VF max. Tj=125C 20 15 120 100 10 80 60 5 40 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 20 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Figure 13. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz Vosc=30mV Tj=25C Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Rth(j-a)(C/W) 110 Epoxy printed circuit board FR4, copper thickness: 35 m 100 90 80 70 DO-41 Lleads=10mm 10 60 50 40 30 20 SMB VR(V) 1 1 10 100 1000 10 0 0 1 2 3 4 S(cm) 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 m) Rth(j-a)(C/W) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SMA S(cm) Doc ID 8321 Rev 4 5/9 Package information STTH1L06 2 Package information Epoxy meets UL 94, V0 Band indicates cathode Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. SMA dimensions Dimensions Ref. E1 Millimeters Min. Max. 2.45 0.20 1.65 0.40 2.90 5.35 4.60 1.50 Inches Min. 0.075 0.002 0.049 0.006 0.089 0.189 0.156 0.030 Max. 0.094 0.008 0.065 0.016 0.114 0.211 0.181 0.059 D A1 A2 b 1.90 0.05 1.25 0.15 2.25 4.80 3.95 0.75 E c A1 D E b C L A2 E1 L Figure 16. Footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 6/9 Doc ID 8321 Rev 4 STTH1L06 Table 7. SMB dimensions Package information Dimensions Ref. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.40 3.95 5.60 4.60 1.50 Inches Min. 0.075 0.002 0.077 0.006 0.130 0.201 0.159 0.030 Max. 0.096 0.008 0.087 0.016 0.156 0.220 0.181 0.059 D A1 A2 b 1.90 0.05 1.95 0.15 3.30 5.10 4.05 0.75 E c A1 D E b C L A2 E1 L Figure 17. Footprint (dimensions in mm) 1.62 2.60 1.62 2.18 5.84 Table 8. DO-41 (plastic) dimensions Dimensions Ref. OD OB Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1 Max. 0.205 0.107 A C A C 4.07 2.04 25.4 0.71 B C D 0.86 0.028 0.034 Doc ID 8321 Rev 4 7/9 Ordering information STTH1L06 3 Ordering information Table 9. Ordering information Marking STTH1L06 STTH1L06 BL6 HL6 Package DO-41 DO-41 SMB SMA Weight 0.34 g 0.34 g 0.11 g 0.068 g Base qty 2000 5000 2500 5000 Delivery mode Ammopack Tape and reel Tape and reel Tape and reel Order code STTH1L06 STTH1L06RL STTH1L06U STTH1L06A 4 Revision history Table 10. Date Jul-2002 30-Sep-2009 Document revision history Revision 3C 4 Last issue. Updated table 8 package dimensions. Changes 8/9 Doc ID 8321 Rev 4 STTH1L06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 8321 Rev 4 9/9 |
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